Electrical properties of ultrathin titanium dioxide films on silicon

被引：19

作者：

Dutta, Shankar ^{[1
]}

Leeladhar ^{[1
]}

Pandey, Akhilesh ^{[1
]}

Thakur, Om Prakash ^{[1
]}

Pal, Ramjay ^{[1
]}

机构：

[1] DRDO, Solid State Phys Lab, Delhi 110054, India

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2015年 / 33卷 / 02期

关键词：

RUTILE TIO2 FILMS; PULSED-LASER DEPOSITION; THERMAL-OXIDATION; THIN-FILM; GROWTH; ANATASE; OXIDE; LAYER;

D O I：

10.1116/1.4904978

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultrathin (<50 nm) titanium dioxide (TiO2) films are being widely investigated as high-k dielectrics for future metal oxide semiconductor (MOS) technology. In this paper, ultrathin TiO2 films (similar to 20 nm) were deposited on silicon substrates by sputtering technique and subsequently annealed at 800 degrees C in oxygen environment for different durations (15-60 min). The annealed films were poly-crystalline in nature with rutile phase. The value of dielectric constant was found to be 32-60 at 1 kHz measurement frequency. Threshold voltages of the MOS structures were found to vary from -0.1 to -0.5V with the duration of annealing. Leakage current density (1 x 10(-2)-1 x 10(-8) A/cm(2) at 1V) and dielectric breakdown fields (8.15-9.8 MV/cm) were observed to improve with annealing time. (C) 2014 American Vacuum Society.

引用

页数：4

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