InAs quantum cascade lasers based on coupled quantum well structures

被引：0
|
作者：
Ohtani, K
Fujita, K
Ohno, H
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期
关键词：
quantum cascade laser; molecular beam epitaxy; InAs/AlGaSb; coupled quantum well;
D O I：
10.1143/JJAP.44.2572
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the operation of mid-infrared InAs quantum cascade lasers based on coupled quantum well structures. The laser structures are grown on n-type InAs(100) substrate by solid-source molecular beam epitaxy. The resonant longitudinal optical phonon scattering is used for carrier extraction from ground state in active layers. The laser emitting around 9.1 mm in the pulse mode operates up to 160 K. The observed minimum threshold current density is 3.6 kA/cm2 at 80 K. We also measure the waveguide loss and compare with the design.
引用
收藏
页码：2572 / 2574
页数：3
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