Properties of amorphous silicon carbide films prepared by PECVD

被引：17
|
作者：
Huran, J
Hrubcin, L
Kobzev, AP
Liday, J
机构：
[1] JOINT INST NUCL RES, NEUTRON PHYS LAB, DUBNA 141980, RUSSIA
[2] SLOVAK UNIV TECHNOL BRATISLAVA, FAC ELECT ENGN, BRATISLAVA 81219, SLOVAKIA
来源：
VACUUM | 1996年 / 47卷 / 10期
关键词：
D O I：
10.1016/0042-207X(96)00128-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RES, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of Si-C, Si-H and C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions. Copyright (C) 1996 Published by Elsevier Science Ltd
引用
收藏
页码：1223 / 1225
页数：3
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