Comparative characterization of nitrogen-rich CNx films prepared by different ICP-CVD techniques

被引：0
|
作者：
Popov, C
Bulir, J
Zambov, L
Jelinek, M
Delplancke-Ogletree, MP
Kulisch, W
机构：
[1] Univ Gesamthsch Kassel, Inst Tech Phys, D-34109 Kassel, Germany
[2] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[3] Free Univ Brussels, B-1050 Brussels, Belgium
来源：
JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thin amorphous nitrogen-rich CN, films (NI(C+N) greater than or equal to 0.5) have been prepared by two inductively coupled plasma chemical vapour deposition (ICP-CVD) techniques: using transport reactions from a solid carbon source and from CCl4/NH3/Ar and CCl4/N-2/H-2/Ar gas mixtures. Optical emission spectroscopy (OES) and quadrupole mass spectrometry were used to derive information about the plasma properties. The composition of the films was investigated by Auger electron spectroscopy (AES), wavelength dispersive X-ray (WDX) and elastic recoil detection (ERD) analyses, and the chemical bonding structure by X-ray photoelectron spectroscopy (,NPS) and Fourier transform infrared (FTIR) spectroscopy. In addition, several application relevant properties (mechanical, optical, electrical) of the nitrogen-rich CNx films were studied. The results of both deposition methods were compared and discussed on the base of the specificities of the processes.
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页码：731 / 738
页数：8
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