Barrier height modulation and dipole moments in metal-molecule-silicon diodes

被引：0

作者：

Scott, Adina ^{[1
,2
]}

Risko, Chad ^{[3
]}

Ratner, Mark A. ^{[3
]}

Janes, David B. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / +

页数：2

共 50 条

[31] The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
S. Yu. Davydov
A. A. Lebedev
O. V. Posrednik
Yu. M. Tairov
Semiconductors, 2001, 35 : 1375 - 1377
[32] MODULATION EFFECT BY INTENSE HOLE INJECTION IN EPITAXIAL SILICON SCHOTTKY-BARRIER-DIODES
JAGER, H
KOSAK, W
SOLID-STATE ELECTRONICS, 1973, 16 (03) : 357 - 364
[33] MINORITY-CARRIER INJECTION AND RESISTANCE MODULATION IN SILICON SURFACE-BARRIER DIODES
ANDERSSON, LP
HYDER, A
BERG, S
NUCLEAR INSTRUMENTS & METHODS, 1974, 114 (02): : 237 - 239
[34] HIGH-BARRIER HEIGHT METAL-INSULATOR-SEMICONDUCTOR DIODES ON N-INP
LEE, YS
ANDERSON, WA
JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) : 4051 - 4056
[35] Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes
Chen, Kung-Chu
Lin, Kuan-Wun
Hwu, Jenn-Gwo
IEEE ACCESS, 2021, 9 : 163929 - 163937
[36] Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole
Ali, Muhammad Yusuf
Tao, Meng
JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[37] The Influence of Ag Metal Thickness on Barrier Height in Ag/n-CdSe Schottky Diodes
Ozmentes, Resit
Jamil, Nawfal Y.
Al Taan, Laith M.
Abbas, Jangeez Al
SEMICONDUCTORS, 2024, 58 (08) : 631 - 636
[38] Dynamic barrier height modulation analysis of metal-insulator-semiconductor junctions built on silicon surfaces modified by covalent organic layers
Oldani, Matteo
Narducci, Dario
Taffurelli, Alberto
SURFACE SCIENCE, 2007, 601 (13) : 2845 - 2849
[39] BARRIER HEIGHT MODIFICATION IN HEAT-TREATED ALUMINUM SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON
KRISHNA, KV
GUHA, S
NARASIMHAN, KL
SOLAR CELLS, 1981, 4 (02): : 153 - 156
[40] Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces
Li, Yang
Long, Wei
Tung, Raymond T.
APPLIED SURFACE SCIENCE, 2013, 284 : 720 - 725

← 1 2 3 4 5 →