Efficient informatics-based source and mask optimization for optical lithography

被引:2
|
作者
Pan, Yihua [1 ]
Ma, Xu [1 ]
Zhang, Shengen [1 ]
Garcia-Frias, Javier [2 ]
Arce, Gonzalo R. [2 ]
机构
[1] Beijing Inst Technol, Sch Opt & Photon, Minist Educ China, Key Lab Photoelect Imaging Technol & Syst, Beijing 100081, Peoples R China
[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
基金
中国国家自然科学基金;
关键词
PIXELATED SOURCE;
D O I
10.1364/AO.433962
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Source and mask optimization (SMO) is a widely used computational lithography technology that greatly improves the image fidelity of lithography systems. This paper develops an efficient informatics-based SMO (EISMO) method to improve the image fidelity of lithography systems. First, a communication channel model is established to depict the mechanism of information transmission in the SMO framework, where the source is obtained from the gradient-based SMO algorithm. The manufacturing-aware mask distribution is then optimized to achieve the best mutual information, and the theoretical lower bound of lithography patterning error is obtained. Subsequently, an efficient informatics-based method is proposed to refine the mask optimization result in SMO, further reducing the lithography patterning error. It is shown that the proposed EISMO method is computationally efficient and can achieve superior imaging performance over the conventional SMO method. (C) 2021 Optical Society of America
引用
收藏
页码:8307 / 8315
页数:9
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