Excimer laser irradiation of AMFC polycrystalline Si thin films

被引：0
|
作者：
Lee, SJ [1 ]
Song, BC [1 ]
Kim, SH [1 ]
Lee, SK [1 ]
Bang, MS [1 ]
Nam, SE [1 ]
机构：
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 47卷 / 02期
关键词：
excimer laser; AMFC (alternating magnetic field crystallization); two-step annealing;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In general, the rms roughness of excimer laser annealing (ELA) poly-Si is 200 similar to 500 angstrom and solid phase crystallization (SPC) has too many defects. In order to overcome these weak points, we used on excimer laser to irradiate alternative magnetic field crystallization (AMFC) poly-Si. Our results showed that the rms roughness of two-step annealed poly-Si was reduced to 88 angstrom. When we compared the two-step poly-Si with normal AMFC poly-Si, we confirmed that the number of defects induced by excimer laser irradiation of after annealed AMFC poly-Si, was decreased and that the grain size of the two-step poly-Si was larger than that of the AMFC poly-Si. The processed films were characterized using optical microscopy, ultraviolet-visible spectroscopy (UV spectroscopy), atomic force microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM) and transmission electron microscopy (TEM).
引用
收藏
页码：339 / 343
页数：5
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