Quantum transport theory for nanostructures with Rashba spin-orbital interaction

被引:303
|
作者
Sun, QF
Wang, J
Guo, H
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[4] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada
[5] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
关键词
D O I
10.1103/PhysRevB.71.165310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on a general theory for analyzing quantum transport through devices in the metal-QD-metal configuration where QD is a quantum dot or the device-scattering region which contains Rashba spin-orbital and electron-electron interactions. The metal leads may or may not be ferromagnetic, and they are assumed to weakly couple to the QD region. Our theory is formulated by second quantizing the Rashba spin-orbital interaction in spectral space (instead of real space), and quantum transport is then analyzed within the Keldysh nonequilibrium Green's function formalism. The Rashba interaction causes two main effects to the Hamiltonian: (i) it gives rise to an extra spin-dependent phase factor in the coupling matrix elements between the leads and the QD, and (ii) it gives rise to an interlevel spin-flip term, but forbids any intralevel spin flips. Our formalism provides a starting point for analyzing many quantum transport issues where spin-orbital effects are important. As an example, we investigate the transport properties of a Aharnov-Bohm ring in which a QD having a Rashba spin-orbital and electron-electron interactions is located in one arm of the ring. A substantial spin-polarized conductance or current emerges in this device due to the combined effect of a magnetic flux and the Rashba interaction. The direction and strength of the spin polarization are shown to be controllable by both the magnetic flux and a gate voltage.
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页数:11
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