Synthesis and properties of β-Ga2O3 nanostructures

被引：13
|
作者：
Wang, Jie [1 ]
Zhuang, Huizhao [1 ]
Zhang, Xiaokai [1 ]
Zhang, Shiying [1 ]
Li, Junlin [1 ]
机构：
[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
来源：
VACUUM | 2011年 / 85卷 / 08期
基金：
中国国家自然科学基金;
关键词：
beta-Ga2O3; nanostructure; Magnetron sputtering; Annealing; NANOWIRES; GROWTH; PHOTOLUMINESCENCE; NANOBELTS; MORPHOLOGY; SURFACE;
D O I：
10.1016/j.vacuum.2010.12.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel method was utilized to synthesize one-dimensional beta-Ga2O3 nanostructures. In this method, beta-Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia in a quartz tube. The as-obtained samples were analyzed in detail using the methods of X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDX) attached to the HRTEM instrument. The results show that the formed nanostructures are single-crystalline Ga2O3. The annealing temperature has an evident influence on the morphology of the beta-Ga2O3 nanostructures. The growth mechanism of the beta-Ga2O3 nanostructures is also discussed by conventional vapor solid (VS) mechanism. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：802 / 805
页数：4
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