A GL photo-thermal theory upon new hyperbolic two-temperatures in a semiconductor material

A novel GL model of a new hyperbolic two-temperatures theory is studied to investigate the propagation of the thermoelastic waves on semiconductor materials. The basic equations are studied during the photo-excitation processes in the context of the photo-thermo-elastic model. The outer surface of the semiconductor medium is illuminated by a laser pulse. By using Laplace transform with the eigenvalues scheme, the analytical solutions of all studying fields are presented. The carrier density variation, the variations of the thermodynamic and the conductive temperatures, the displacement and stress components in a semi-infinite semi-conductor material are estimated. The effects of the hyperbolic two-temperature parameter and the relaxation times on the distributions of wave propagation of physical fields for semiconductor silicon (Si) medium are shown graphically and discussed.