Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition

被引：1
|
作者：
He Yong [1 ,2 ]
Li Xiao-Min [1 ]
Gao Xiang-Dong [1 ,2 ]
Leng Xue [1 ,2 ]
Wang Wei [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2011年 / 26卷 / 11期
基金：
中国国家自然科学基金;
关键词：
pulse laser deposition; PMN-PT thin films; microstructure; electrical properties; BUFFER LAYERS; SI;
D O I：
10.3724/SP.J.1077.2011.11299
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Lead magnesium niobate-lead titanate (PMN-PT) ferroelectric thin films with composition near the morphotropic phase boundary (MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD). Highly (001)-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were obtained. The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process. With the use of oxygen plasma, the dielectric constant of the PMN-PT thin film is increased from 1484 to 3012, the remnant polarization (2P(r)) changes from 18 mu C/cm(2) to 38 mu C/cm(2).
引用
收藏
页码：1227 / 1232
页数：6
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