The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes

被引：2
|
作者：
Henry, MO
McGlynn, E
Fryar, J
Lindner, S
Bollmann, J
机构：
[1] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland
[2] Max Planck Inst Festkorperforsch, D-70506 Stuttgart, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 178卷
关键词：
D O I：
10.1016/S0168-583X(00)00474-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Beams of radioactive ions implanted in semiconductors provide a unique means of establishing the chemical identity of point defects and of exploring the evolution of defects through several chemical species. We report results obtained for samples of Si implanted with either Hg-193 or Hg-197. The defects produced were studied using photoluminescence (PL). In addition to the defects involving only Hg or its daughters, more complex defects containing Li were also created and studied as the radioactive heavy element constituents decayed. We have identified a new defect containing one Hg atom and another involving Li and two Au atoms. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：256 / 259
页数：4
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