Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

被引：2

作者：

Arce, P. ^{[1
]}

Barcala, J. M. ^{[1
]}

Calvo, E. ^{[1
]}

Ferrando, A. ^{[1
]}

Josa, M. I. ^{[1
]}

Molinero, A. ^{[1
]}

Navarrete, J. ^{[1
]}

Oller, J. C. ^{[1
]}

Yuste, C. ^{[1
]}

Brochero, J. ^{[2
]}

Calderon, A. ^{[2
]}

Fernandez, M. G. ^{[2
]}

Gomez, G. ^{[2
]}

Gonzalez-Sanchez, F. J. ^{[2
]}

Martinez-Rivero, C. ^{[2
]}

Matorras, F. ^{[2
]}

Rodrigo, T. ^{[2
]}

Ruiz-Arbol, P. ^{[2
]}

Scodellaro, L. ^{[2
]}

Sobron, M. ^{[2
]}

Vila, I. ^{[2
]}

Virto, A. L. ^{[2
]}

Fernandez, J. ^{[3
]}

机构：

[1] CIEMAT, E-28040 Madrid, Spain

[2] Univ Cantabria, CSIC, Inst Fis Cantabria, E-39005 Santander, Spain

[3] Univ Oviedo, Oviedo, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 632卷 / 01期

关键词：

ASPD; Amorphous silicon; Position sensing detectors; Direct and inverse Staebler-Wronski effects; POSITION DETECTORS;

D O I：

10.1016/j.nima.2010.12.201

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：164 / 166

页数：3

共 42 条

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