Characterization of nanotextured AIN thin films by x-ray absorption near-edge structures

被引:18
|
作者
Suga, T
Kameyama, S
Yoshioka, S
Yamamoto, T
Tanaka, I [1 ]
Mizoguchi, T
机构
[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
[2] Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan
关键词
D O I
10.1063/1.1904714
中图分类号
O59 [应用物理学];
学科分类号
摘要
AlN thin films have been grown on c-cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5 x 10(-4) Pa was used to examine the crystallographic orientation dependence of Al K-edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N-2 backfill of 7 x 10(-2) Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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