Nanosecond laser ablation and deposition of Ge films

被引：0
|
作者：
Yap, Seong Shan [1 ]
Siew, Wee Ong [2 ]
Ladam, Cecile [3 ]
Dahl, Oystein [3 ]
Reenaas, Turid Worren [1 ]
Tou, Teck Yong [2 ]
机构：
[1] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway
[2] Multimedia Univ, Fac Engn, Cyberjaya 63100, Selangor, Malaysia
[3] SINTEF Mat & Chem, N-7465 Trondheim, Norway
来源：
NANOSTRUCTURED THIN FILMS III | 2010年 / 7766卷
关键词：
pulsed laser deposition; laser ablation; germanium; nanoclusters; droplets; nanostructures; amorphous germanium; EPITAXIAL GE; OPTICAL-PROPERTIES; QUANTUM DOTS; SI; DROPLETS;
D O I：
10.1117/12.869014
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background pressure of < 10(-6) Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties on laser wavelengths and fluence are discussed.
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页数：6
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