Solid-State Amplifiers for Terahertz Electronics

被引:0
|
作者
Deal, W. R. [1 ]
机构
[1] Northrop Grumman Aerosp Syst, Redondo Beach, CA 90278 USA
关键词
MMIC; Low Noise Amplifier; Terahertz; Indium Phosphide; HEMT; HBT; Integrated Circuit;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the fMAX of current generation InP transistors pushing above 1-THz and new transistor scaling in progress, the operational frequency of solid-state amplifiers is being pushed towards THz frequencies. In this paper we present out latest work towards demonstrating THz frequency amplifiers, including measured gain and noise performance of a 0.48 THz low noise amplifier using scaled InP transistors. Initial performance of next generation transistors is also presented, along with infrastructure necessary to package and operate solid-state amplifiers at THz frequencies.
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页码:1122 / 1125
页数:4
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