Growth and characterization of DyP/GaAs and DyAs/GaAs-based heterostructures and superlattices

被引:2
|
作者
Lee, PP
Hwu, RJ
Sadwick, LP
Balasubramaniam, H
Kumar, BR
Chern, JH
Lareau, RT
机构
[1] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA
[2] Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA
[3] USA, Res Labs, Red Bank, NJ 07703 USA
来源
PHYSICA E | 1998年 / 2卷 / 1-4期
基金
美国国家科学基金会;
关键词
rare earth group V compound; DyP; DyAs; semi-metal;
D O I
10.1016/S1386-9477(98)00075-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs is reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. DyAs, on the other hand, has a mismatch of nearly 2.4%, Both DSIP and DyAs have been grown by solid source MBE using custom designed group V thermal cracker cells and group III high-temperature effusion cells. High-quality DyP and DyAs epilayers, as determined by XRD, TEM, and AFM analysis, were obtained for growth temperatures ranging from 500 degrees C to 600 degrees C with growth rates between 0.5 and 0.7 mu m/h. The DyP epilayers are n-type with measured electron concentrations of the order of 3 x 10(20) to 4 x 10(20) cm(-3). with room temperature mobilities of 250-300 cm(2)/V s, and with a barrier height of 0.75 eV to GaAs. The DyAs epilayers are also n-type with concentration of 1 x 10(21) to 2 x 10(21) cm(-3), with mobilities between 25 and 40 cm(2)/V s. DyP is stable in air with no apparent oxidation taking place, even after months of ambient exposure to untreated air. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:358 / 362
页数:5
相关论文
共 50 条
  • [1] Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
    P. P. Lee
    R. J. Hwu
    L. P. Sadwick
    H. Balasubramaniam
    B. R. Kumar
    R. Alvis
    R. T. Lareau
    M. C. Wood
    [J]. Journal of Electronic Materials, 1998, 27 : 405 - 408
  • [2] Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Alvis, R
    Lareau, RT
    Wood, MC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 405 - 408
  • [3] Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Lai, TC
    Chu, SNG
    Alvis, R
    Lareau, RT
    Wood, MC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1467 - 1470
  • [4] High temperature characterization of MBE grown DyP/GaAs and DyAs/GaAs
    Lee, PP
    Sadwick, LP
    Hwu, RJ
    Lai, TC
    Huang, JY
    Wang, X
    Kumar, BR
    Balasubramaniam, H
    [J]. 1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, : 287 - 291
  • [5] Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Lai, TC
    Chu, SNG
    Alvis, R
    Lareau, RT
    Wood, MC
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 159 - 162
  • [6] Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE
    Lee, PP
    Hwu, RJ
    Sadwick, LP
    Balasubramaniam, H
    Kumar, BR
    Lai, TC
    Chu, SNG
    Alvis, R
    Lareau, RT
    Wood, MC
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 159 - 162
  • [7] Spectroscopic ellipsometry characterization of interface reactivity in GaAs-based superlattices
    Losurdo, M
    Giuva, D
    Giangregorio, MM
    Bruno, G
    Brown, AS
    [J]. THIN SOLID FILMS, 2004, 455 : 457 - 461
  • [8] GROWTH AND CHARACTERIZATION OF GAAS/SI/GAAS HETEROSTRUCTURES
    THORDSON, JV
    SONGPONGS, P
    SWENSON, G
    ANDERSSON, TG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 696 - 699
  • [9] GROWTH AND CHARACTERIZATION OF GAAS/AL/GAAS HETEROSTRUCTURES
    BHATTACHARYA, P
    OH, JE
    SINGH, J
    BISWAS, D
    CLARKE, R
    DOSPASSOS, W
    MERLIN, R
    MESTRES, N
    CHANG, KH
    GIBALA, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3700 - 3705
  • [10] GROWTH AND CHARACTERIZATION OF GAAS DOPING SUPERLATTICES
    JENSEN, PN
    [J]. SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (3-4) : 103 - 106