Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser

被引：0
|
作者：
Sun, Xiao [1 ]
Chang, Qingjiang [1 ]
机构：
[1] Alcatel Lucent Shanghai Bell, Alcatel Lucent Bell Labs, Shanghai 201206, Peoples R China
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXIII | 2015年 / 9357卷
关键词：
GaInNAs; N-localized-states; dual-wavelength; quantum well;
D O I：
10.1117/12.2077646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum. Such strong alloy band edge N-localized-states can locally capture carriers, thus lasing directly occurs from them, leading to dual-wavelength emission.
引用
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页数：8
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