MOCVD preparation of Pt-doped SnO2 films

被引：0
|
作者：
Amjoud, MB
Maury, F
机构：
[1] Fac Sci & Tech Gueliz, Dept Chim, Marrakech 40000, Morocco
[2] Ecole Natl Super Chim, F-31077 Toulouse 4, France
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1998年 / 53卷 / 289期
关键词：
SnO2; MOCVD; gas sensor; Pt doping;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Undoped and in situ Pt doped SnO2 thin films have been deposited on various substrates by MOCVD in the temperature range 320-440 degrees C. The influence of the doping on the growth rate, the morphology and the microstructure of the layers allow a good control of the films properties. The resistivity at room temperature is strongly correlated to the Pt content of the films. For instance, the sensitivity against ethanol vapor is increased by a factor 4 owing the Pt doping.
引用
收藏
页码：614 / +
页数：8
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