160 GHz on-chip dipole antenna structure in silicon technology

被引：0
|
作者：
Neculoiu, D. [1 ,2 ]
Muller, A. [1 ]
Tang, K. [3 ]
Laskin, E. [3 ]
Voinigescu, S. P. [3 ]
机构：
[1] IMT Bucharest, Bucharest, Romania
[2] Univ Politehn Bucuresti, Dept Elect, Bucharest, Romania
[3] Univ Toronto, ECE Dept, Toronto, ON, Canada
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
antenna design; dipole antenna; BiCMOS technology; electromagnetic simulation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the electromagnetic modelling and design of a on-chip dipole antenna operating in the 160 GHz frequency range. The antenna is fabricated in the 130nm SiGe HBT with BiCMOS9 backend technologies. The near field measurements are in good agreement with the electromagnetic simulation results obtain using a appropriate model.
引用
收藏
页码：245 / +
页数：2
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