Imaging carrier and phonon transport in Si using ultrashort optical pulses

被引:1
|
作者
Hurley, D. H. [1 ]
Wright, O. B. [2 ]
Matsuda, O. [2 ]
McCandless, Brian E. [3 ]
Shinde, Subhash [4 ]
机构
[1] Idaho Natl Lab, POB 1625, Idaho Falls, ID 83415 USA
[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
[3] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
Thermal transport; phonon; electron transport; recombination; surface acoustic wave; grain boundary;
D O I
10.1117/12.808212
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A series of experiments have been conducted that microscopically image thermal diffusion and surface acoustic phonon propagation within a single crystallite of a polycrystalline Si sample. The experimental approach employs ultrashort optical pulses to generate an electron-hole plasma and a second probe pulse is used to image the evolution of the plasma. By decomposing the signal into a component that varies with delay time and a steady state component that varies with pump modulation frequency, the respective influence of carrier recombination and thermal diffusion are identified. Additionally, the coherent surface acoustic phonon component to the signal is imaged using a Sagnac interferometer to monitor optical phase.
引用
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页数:7
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