IGCTs: High-Power Technology for Power Electronics Applications

被引：0
|
作者：
Nistor, I. [1 ]
Wikstroem, T. [2 ]
Scheinert, M. [1 ]
机构：
[1] ABB Switzerland Ltd, Corp Res, CH-5405 Dattwil, Switzerland
[2] ABS Switzerland Ltd, Semicond, CH-5600 Lenzburg, Switzerland
来源：
CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2009年
关键词：
Integrated gate controlled thyristor; FACTS; hybrid circuit breaker; medium voltage drive; power semiconductors; CIRCUIT-BREAKER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper focuses on the most recent technical developments in Integrated Gate Commutated Thyristors. Improved Safe Operating Area (SOA) of a new IGCT chip set based on ABB's High Power Technology (HPT) platform with a rated voltage of 10kV is presented. A matching 10kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2kV RMS or more.
引用
收藏
页码：65 / +
页数：3
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