Extreme ultraviolet nanolithography for ULSI: A review

被引：26
|
作者：
Seisyan, RP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS | 2005年 / 50卷 / 05期
关键词：
D O I：
10.1134/1.1927207
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The basic concepts of high-resolution extreme ultraviolet nanolithography, which is aimed at producing ultra-large-scale integrated circuits (with an integration one or two orders of magnitude exceeding present-day integration levels), are reviewed and substantiated. The problems in and the current status of this field of technology are considered. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：535 / 545
页数：11
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