Results of radiation test of the cathode front-end board for CMS endcap muon chambers

After a brief overview of the CMS EMU electronics system, results on radiation induced Single Event Effects, TID and Displacement Effects will be reported. These results are obtained by irradiating the components on electronics boards with 63 MeV protons and 1 MeV neutrons. During the proton irradiation, the electronics board was fully under power, all components on the board were active and the data was readout in the same way as designed for CMS. No deterioration of analog performance for each the three CMOS ASIC's on the tested board was observed, up to a dose of 10 kRads. Each of the tested FPGA's survived beyond the dose of 30 kRads. No Single Event Latch-up (SEL) was detected for the CMOS ASIC's up to a proton fluence of 2 x 10(12) per cm(2). Single Event Upsets (SEU) in FPGA's were detected and their cross sections measured. SEU mitigation with triple module redundancy and voting was implemented and rested.