Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

被引：4
|
作者：
Yu, G
Soga, T
Shao, CL
Jimbo, T
Umeno, M
机构：
[1] NAGOYA INST TECHNOL, INSTRUMENT & ANAL CTR, SHOWA KU, NAGOYA, AICHI 466, JAPAN
[2] NAGOYA INST TECHNOL, DEPT ELECT & COMP ENGN, SHOWA KU, NAGOYA, AICHI 466, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
polycrystalline Si; excimer laser; spectroscopic ellipsometry; dielectric function; critical point;
D O I：
10.1016/S0169-4332(96)00889-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Using spectroscopic ellipsometry (SE), optical properties of poly-Si obtained by excimer laser annealing of amorphous silicon (alpha-Si) are evaluated. Both, amorphous silicon and SiO2 are deposited on Si substrate (alpha-Si/SiO2/Si) by low temperature chemical vapor deposition (LPCVD). SE measurement shows that the crystallization starts with laser annealing of energy 144-280 mJ/cm(2) and above at which it remains amorphous. A linear regression analysis (LRA) and a Bruggeman effective-medium approximation (EMA) indicate that the laser annealed layer consists of 91.3% crystalline Si and 8.7% amorphous Si for samples irradiated in two steps, i.e., 344 and 276 mJ/cm(2) of each pulse. The thickness of each layer determined by SE is in good agreement with that of cross-section transmission electron microscopy (TEM).
引用
收藏
页码：489 / 492
页数：4
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