Design principles for modeling and simulations of microwave circuits

被引：0
|
作者：
Grama, A [1 ]
Hurgoi, F [1 ]
Chindris, G [1 ]
Pop, O [1 ]
机构：
[1] Tech Univ Cluj Napoca, Dept Appl Elect, Cluj Napoca 3400, Romania
来源：
24TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY: CONCURRENT ENGINEERING IN ELECTRONIC PACKAGING, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISSE.2001.931023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is usually proven difficult to accurately simulate the microwave and RF circuits. This paper intends to present an easy method for modeling and simulation of nonlinear active microwave circuits using Ansoft Serenade 8.0 Design Environment. Starting with some simple circuits (MESFET mixer circuits, GaAs BJT Feedback Microwave Amplifier), the authors describe the main principles of simulating RF and microwave circuits and a new method for modeling the active RF devices (such as MESFET and GaAs BJT Transistors) in order to obtain the best results for multitone nonlinear analysis. The new proposed method also covers the stability problems, based on the Nyquist stability criteria, and the matching impedance Smith plots of the RF circuits.
引用
收藏
页码：102 / 106
页数：5
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