Low Overhead Software Wear Leveling for Hybrid PCM plus DRAM Main Memory on Embedded Systems

被引:26
|
作者
Hu, Jingtong [1 ]
Xie, Mimi [1 ]
Pan, Chen [1 ]
Xue, Chun Jason [2 ]
Zhuge, Qingfeng [3 ]
Sha, Edwin H-M. [3 ,4 ]
机构
[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA
[2] City Univ Hong Kong, Dept Comp Sci, Hong Kong, Hong Kong, Peoples R China
[3] Chongqing Univ, Coll Comp Sci, Chongqing 400044, Peoples R China
[4] Univ Texas Dallas, Dept Comp Sci, Richardson, TX 75080 USA
基金
美国国家科学基金会;
关键词
DRAM; energy; main memory; nonvolatile memories (NVMs); phase change memory (PCM); wear leveling; write reduction; PHASE-CHANGE MEMORY; PRAM;
D O I
10.1109/TVLSI.2014.2321571
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Phase change memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics, such as low-cost, shock-resistivity, nonvolatility, high density, and low leakage power. However, relatively low endurance has limited its practical applications. In this paper, in addition to existing hardware level optimizations, we propose software enabled wear-leveling techniques to further extend PCMs lifetime when it is adopted in embedded systems. Most existing software optimization techniques focus on reducing the total number of writes to PCM, but none of them consider wear leveling, in which the writes are distributed more evenly over the PCM. An integer linear programming formulation and a polynomial-time algorithm, the software wear-leveling algorithm, are proposed in this paper to achieve wear leveling without hardware overhead. According to the experimental results, the proposed techniques can reduce the number of writes on the most-written addresses by more than 80% when compared with a greedy algorithm, and by more than 60% when compared with the existing optimal data allocation algorithm with under 6% memory access overhead.
引用
收藏
页码:654 / 663
页数:10
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