Crystallization Kinetics of Amorphous Sputtered Nb-Doped TiO2 Thin Films

被引：0
|
作者：
Ngoc Lam Huong Hoang [1 ,2 ]
Hirose, Yasushi [1 ,2 ]
Nakao, Shoichiro [1 ,2 ]
Hasegawa, Tetsuya [1 ,2 ]
机构：
[1] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan
[2] KAST, Kawasaki, Kanagawa 2130012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 10期
关键词：
X-RAY-DIFFRACTION; PHASE-CHANGE; TARGETS; GROWTH;
D O I：
10.1143/APEX.4.105601
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallization kinetics of amorphous sputtered Nb-doped TiO2 (TNO) thin films during isothermal annealing was examined using in situ X-ray diffraction (XRD) measurements. A Johnson-Mehl-Avrami analysis yielded Avrami exponents in the range of 2.0 to 2.7 for TNO films with various oxygen contents, indicating that the crystallization of amorphous TNO films is essentially two-dimensional. The two-dimensional crystal growth is also confirmed by ex situ polarized-light optical microscopic observations of grains, which have much larger lateral sizes than the film thickness. (C) 2011 The Japan Society of Applied Physics
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页数：3
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