Preparation and characteristics research of p-type ZnO films

被引：7

作者：

Wang Nan ^{[1
]}

Kong Chun-Yang ^{[1
]}

Zhu Ren-Jiang ^{[1
]}

Qin Guo-Ping ^{[1
]}

Dai Te-Li ^{[1
]}

Nan Mao ^{[1
]}

Ruan Hai-Bo ^{[1
]}

机构：

[1] Chongqing Normal Univ, Coll Phys & Infromat Technol, Chongqing 400047, Peoples R China

来源：

ACTA PHYSICA SINICA | 2007年 / 56卷 / 10期

关键词：

ion-implantation; p-type ZnO films; annealing; radio frequency magnetron sputtering;

D O I：

10.7498/aps.56.5974

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The ZnO films were prepared on Si substrates by RF magnetron sputtering and doped with N by ion-implantation. The samples were then annealed at different temperatures, and showed p-type conduction. The properties were examined by scanning electron microscopy(SEM), X-ray diffraction (XRD), and Hall measurement. The results show that the ZnO films have good surface morphology and are highly c-axis oriented. Hall measurement showed that the resistivity and hole concentration were 41.5 Omega center dot cm and 1. 68 x 10(6) cm(-3), respectively. This paper focuses on the discussion and analysis of the influence of the temperature and time of annealing on the p-type transition of the ZnO films.

引用

页码：5974 / 5978

页数：5

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