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Growth and characterization of large-scale Ti: sapphire crystal using heat exchange method for ultra-fast ultra-high-power lasers

被引：13
|
作者：
Ning, Kaijie [1 ,2 ,3 ]
Liu, Youchen [1 ]
Ma, Jie [4 ]
Zhang, Lianhan [1 ]
Liang, Xiaoyan [5 ]
Tang, Dingyuan [2 ,4 ]
Li, Ruxin [5 ]
Hang, Yin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Nanyang Technol Univ, Temasek Labs, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[5] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
来源：
CRYSTENGCOMM | 2015年 / 17卷 / 14期
关键词：
TISAPPHIRE CRYSTALS; TI-AL2O3; LASER; METHOD HEM; CORUNDUM; MODE;
D O I：
10.1039/c5ce00014a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Large-scale titanium-doped sapphire (Ti:sapphire) crystal was grown in a 380 mm diameter molybdenum crucible using the heat exchange method (HEM) and characterized. The diameter of the core Ti: sapphire single crystal was estimated to be slightly larger than 200 mm. A Ti:sapphire crystal wafer 157 mm in diameter and 28 mm thick was obtained. Characterization based on X-ray diffraction spectroscopy, Raman spectroscopy, and absorption and fluorescence spectroscopy was carried out. The as-grown Ti:sapphire crystal had high intrinsic quality and a large figure of merit (FOM) without additional annealing. The high optical quality of the as-grown Ti:sapphire crystal indicated it is suitable for ultra-fast ultra-high-power lasers in chirped pulse amplification systems.
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页码：2801 / 2805
页数：5
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