Effects of N+ implantation on CoSi2 contacts on shallow junctions

被引：2
|
作者：
Chen, KM [1 ]
Cheng, SL
Chen, LJ
Tsui, BY
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Elect Res & Serv Org, ITRI, Hsinchu, Taiwan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期
关键词：
nitrogen ion implantation; shallow junctions; silicides; residual defects;
D O I：
10.1016/S0254-0584(98)00093-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of nitrogen ion implantation on CoSi2 contacts on shallow junctions have been investigated. The formation, growth, stability and resistivity of silicides as well as the removal of residual defects have been studied. Nitrogen ion implantation was shown to improve the thermal stability of CoSi2 thin films. The sheet resistance was found to be nearly constant in a wide range of temperature in N+ implanted samples. For Co on 30 keV N+ implanted samples, a continuous and pinhole-free polycrystalline CoSi2 layer was found to form in all samples after annealing at 700-900 degrees C. The thermal stability of the CoSi2 layer in the BF2+-N+ samples was better than samples implanted with N+ or As+-N+. The improvement in the thermal stability and surface morphology of CoSi2 in BF2+-N+ samples is attributed to the presence of fluorine bubbles at CoSi2 grain boundaries, which impeded the grain growth. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：71 / 75
页数：5
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