Fabrication of p-type SrCuSeF/n-type In2O3:Sn bilayer ohmic tunnel junction and its application to the back contact of CdS/CdTe solar cells

被引：6
|
作者：
Kitabayashi, Shuya [1 ]
Shiina, Yasuyoshi [2 ]
Murata, Ayuki [2 ]
Okamoto, Tamotsu [2 ]
Wada, Takahiro [1 ]
机构：
[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan
[2] Kisarazu Coll, Natl Inst Technol, Kisarazu, Chiba 2920041, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 08期
基金：
日本科学技术振兴机构;
关键词：
TRANSPARENT THIN-FILMS; WIDE-BAND-GAP; ELECTRICAL-CONDUCTION; DELAFOSSITE STRUCTURE; GROWTH; OXIDE; DEPOSITION; SRCU2O2; CUALO2; ZNO;
D O I：
10.7567/JJAP.56.08MC18
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To develop polycrystalline thin-film tandem solar cells, a SrCuSeF/In2O3:Sn (ITO) bilayer film was studied. The transparent p-type conductive SrCuSeF layer was deposited by pulsed laser deposition (PLD), and the n-type conductive ITO layer was deposited by RF sputtering. The SrCuSeF/ITO bilayer film showed ohmic I-V characteristics. A tunnel junction between the p-type SrCuSeF and n-type ITO layers was successfully formed because the p-type SrCuSeF and the n-type ITO layers had sufficiently high carrier concentrations. The SrCuSeF/ITO bilayer film was applied as the back contact of a CdS/CdTe solar cell. The photovoltaic performance of the CdS/CdTe solar cell depends considerably on the thickness of the SrCuSeF layer. The CdTe solar cell with a back contact of the SrCuSeF layer with a thickness of 34 nm and the ITO layer with a thickness of 200nm showed a high conversion efficiency of 14.3% (V-OC = 804mV, J(SC) = 27.5mA/cm(2), and FF = 0.65). The conversion efficiency was much higher than that of the CdTe solar cell with the SrCuSeF single-layer back contact (11.6%) and that of the CdTe cell with the ITO single-layer back contact (2.75%). (C) 2017 The Japan Society of Applied Physics
引用
收藏
页数：6
相关论文
共 40 条
  • [1] Fabrication of p-type BaCuSF and n-type In2O3:Sn bilayer films and their applications to the back contact of CdS/CdTe solar cells
    Miki, Kenji
    Kawabe, Toshiyuki
    Shiina, Yasuyoshi
    Okamoto, Shota
    Okamoto, Tamotsu
    Wada, Takahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
  • [2] Fabrication of CdS/CdTe solar cells with transparent p-type conductive SrCuSeF back contact
    Wada, Takahiro
    Kitabayashi, Shuya
    Yamamoto, Koichi
    Sakakima, Hiroshi
    Ogawa, Yohei
    Hosono, Aikyo
    Okamoto, Tamotsu
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [3] Fabrication of CdS/CdTe solar cells with transparent p-type conductive BaCuSeF back contact
    Yamamoto, Koichi
    Sakakima, Hiroshi
    Ogawa, Yohei
    Hosono, Aikyo
    Okamoto, Tamotsu
    Wada, Takahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
  • [4] Electrical Properties of N-type CdS and P-type CdTe Thin Films in CdS/CdTe Solar Cells
    Wu, Jingjin
    Ang, Ferryanto
    Zhao, Cezhou
    Smith, Jeremy S.
    PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 385 - 389
  • [5] Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact
    Rohatgi, Ajeet
    Rounsaville, Brian
    Ok, Young-Woo
    Tam, Andrew M.
    Zimbardi, Francesco
    Upadhyaya, Ajay D.
    Tao, Yuguo
    Madani, Keeya
    Richter, Armin
    Benick, Jan
    Hermle, Martin
    IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (05): : 1236 - 1243
  • [6] Fabrication of transparent p-type conductive BaCuSeF films by pulsed laser deposition and their application to CdS/CdTe solar cells
    Yamamoto, Koichi
    Okamoto, Hirokazu
    Sakakima, Hiroshi
    Hayashi, Ryoji
    Ogawa, Yohei
    Okamoto, Tamotsu
    Wada, Takahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [7] Fabrication of n-p junction electrodes made of n-type SnO2 and p-type NiO for control of charge recombination in dye sensitized solar cells
    Bandara, J
    Divarathne, CM
    Nanayakkara, SD
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 81 (04) : 429 - 437
  • [8] Back junction n-type silicon heterojunction solar cells with V2O5 hole-selective contact
    Gerling, Luis G.
    Masmitja, Gerard
    Voz, Cristobal
    Ortega, Pablo
    Puigdollers, Joaquim
    Alcubilla, Ramon
    PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016), 2016, 92 : 633 - 637
  • [9] Trap-assisted recombination for ohmic-like contact at p-type Cu(In, Ga)Se2/back n-type TCO interface in superstrate-type solar cell
    Chantana, Jakapan
    Arai, Hiroyuki
    Minemoto, Takashi
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (04)
  • [10] Transparent p-type AlN:SnO2 and p-AlN:SnO2/n-SnO2:In2O3 p-n junction fabrication
    Liu, Y. S.
    Hsieh, C. I.
    Wu, Y. J.
    Wei, Y. S.
    Lee, P. M.
    Liu, C. Y.
    APPLIED PHYSICS LETTERS, 2012, 101 (12)
1234