Oxime sulfonate chemistry for advanced microlithography

被引：10

作者：

Yamato, Hitoshi ^{[1
]}

Asakura, Toshikage ^{[1
]}

Nishimae, Yuichi ^{[1
]}

Matsumoto, Akira ^{[1
]}

Tanabe, Junichi ^{[1
]}

Birbaum, Jean-Luc ^{[1
]}

Murer, Peter ^{[1
]}

Hintennatin, Tobias ^{[1
]}

Ohwa, Masaki ^{[1
]}

机构：

[1] Ciba Special Chem KK, Coating Effects Segment, Technol Ctr Elect Mat, Amagasaki, Hyogo 6600083, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2007年 / 20卷 / 05期

关键词：

oxime sulfonate; photoacid generator; g-line; i-line; KrF; ArF; chemically amplified resist;

D O I：

10.2494/photopolymer.20.637

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Oxime sulfonate compounds are one of the important chemistry as photoacid generator for advanced lithography application and practically used in mass production of semiconductor chips. This chemistry is adjustable for various applications like g-/h-/i-line, KrF and ArF lithography. This paper describes an overview of oxime sulfonate chemistry for semiconductor resist application, including commercially available products.

引用

页码：637 / 642

页数：6

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