Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

被引：6

作者：

Gokhale, Sasmit S. ^{[1
]}

Han, HyukSu ^{[2
]}

Pelaez, Oswaldo ^{[1
]}

Baciak, James E. ^{[1
]}

Nino, Juan C. ^{[2
]}

Jordan, Kelly A. ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Nucl Engn Program, 100 Rhines Hall, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, 100 Rhines Hall, Gainesville, FL 32611 USA

来源：

RADIATION MEASUREMENTS | 2016年 / 91卷

关键词：

Radiation detector; Bismuth tri-iodide; Surface treatment; Room temperature semiconductor detector; Gamma-ray detector; CRYSTALS; GROWTH; PLATELETS;

D O I：

10.1016/j.radmeas.2016.04.004

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors were fabricated from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (Am-241) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 x 10(-4) cm(2)/V. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：1 / 8

页数：8

共 50 条

[1] Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors
Gokhale, Sasmit S.
Han, Hyuksu
Baciak, James E.
Nino, Juan C.
Jordan, Kelly A.
[J]. RADIATION MEASUREMENTS, 2015, 74 : 47 - 52
[2] Evaluation of Antimony Tri-Iodide Crystals for Radiation Detectors
Onodera, Toshiyuki
Baba, Koei
Hitomi, Keitaro
[J]. SCIENCE AND TECHNOLOGY OF NUCLEAR INSTALLATIONS, 2018, 2018
[3] Bismuth tri-iodide crystal for nuclear radiation detectors
Matsumoto, M
Hitomi, K
Shoji, T
Hiratate, Y
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (05) : 2517 - 2520
[4] Fabrication of indium iodide X- and gamma-ray detectors
Onodera, Toshiyuki
Hitomi, Keitaro
Shoji, Tadayoshi
[J]. 2005 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-5, 2005, : 1375 - 1378
[5] Fabrication of indium iodide X- and gamma-ray detectors
Onodera, Toshiyuki
Hitomi, Keitaro
Shoji, Tadayoshi
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (05) : 3055 - 3059
[6] Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors
Lintereur, Azaree T.
Qiu, Wei
Nino, Juan C.
Baciak, James
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 652 (01): : 166 - 169
[7] Bismuth tri-iodide polycrystalline films for X-ray direct and digital imagers
Aguiar, I.
Kroeger, S.
Fornaro, L.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 610 (01): : 332 - 334
[8] Bismuth tri-iodide polycrystalline films as beta direct and digital imaging detectors for medical applications
Fornaro, L
Cuña, A
Aguiar, I
Pérez, M
Mussio, L
[J]. 2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5, 2004, : 2379 - 2381
[9] Growth of bismuth tri-iodide platelets for room temperature X-ray detection
Fornaro, L
Cuña, A
Noguera, A
Pérez, M
Mussio, L
[J]. 2003 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-5, 2004, : 3541 - 3544
[10] Bismuth tri-iodide polycrystalline films for digital X-ray radiography applications
Fornaro, L
Saucedo, E
Mussio, L
Gancharov, A
Cuña, A
[J]. 2002 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-3, 2003, : 33 - 37

← 1 2 3 4 5 →