Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer

被引：47

作者：

Tseng, Ming Lun ^{[1
,2
]}

Chen, Bo Han ^{[1
,2
]}

Chu, Cheng Hung ^{[1
,2
]}

Chang, Chia Min ^{[1
,2
]}

Lin, Wei Chih ^{[2
]}

Chu, Nien-Nan ^{[3
]}

Mansuripur, Masud ^{[4
]}

Liu, Ai Qun ^{[5
]}

Tsai, Din Ping ^{[1
,2
,3
,6
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan

[4] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[5] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[6] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 18期

关键词：

CHANGE RECORDING LAYER; DATA-STORAGE; THIN-FILMS; CRYSTALLIZATION; MARKS; DEPOSITION; TRANSITIONS; LIQUIDS;

D O I：

10.1364/OE.19.016975

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Femtosecond laser pulses are focused on a thin film of Ge2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. (C) 2011 Optical Society of America

引用

页码：16975 / 16984

页数：10

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