A 5 to 27 GHz MMIC power amplifier.

被引：0

作者：

Jeon, KI ^{[1
]}

Lee, JH ^{[1
]}

Paek, SW ^{[1
]}

Kim, DW ^{[1
]}

Lee, WS ^{[1
]}

Lim, CR ^{[1
]}

Cha, H ^{[1
]}

Choi, H ^{[1
]}

Chung, KW ^{[1
]}

机构：

[1] LG Corp Inst Technol, RF Device Team, Seocho Gu, Seoul 137724, South Korea

来源：

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record of wideband 5 to 27 GHz power amplifier is achieved with 20 dB gain and 21 dBm output power in two stage monolithic form based on LGCIT's 0.25 mum pHEMT. In design, we use lossy matching technique to obtain flat gain characteristic and use Cripps' matching technique to obtain flat output power characteristic. The chip size is compact 3.1 mm x 1.2 mm. We present how to realize wideband output, input and interstage matching network.

引用

页码：541 / 544

页数：4

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