Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes

被引：21

作者：

Hagedorn, Sylvia ^{[1
]}

Walde, Sebastian ^{[1
]}

Susilo, Norman ^{[2
]}

Netzel, Carsten ^{[1
]}

Tillner, Nadine ^{[3
,4
]}

Unger, Ralph-Stephan ^{[1
]}

Manley, Phillip ^{[5
]}

Ziffer, Eviathar ^{[2
]}

Wernicke, Tim ^{[2
]}

Becker, Christiane ^{[5
]}

Lugauer, Hans-Juergen ^{[3
]}

Kneissl, Michael ^{[1
,2
]}

Weyers, Markus ^{[1
]}

机构：

[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[3] Osram Opto Semicond GmbH, Leibnizstr 4, D-93055 Regensburg, Germany

[4] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, Hans Sommer Str 66, D-38106 Braunschweig, Germany

[5] Helmholtz Zentrum Berlin Mat & Energie GmbH, Nano SIPPE, Albert Einstein Str 16, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 07期

关键词：

AlN; high-temperature annealing; metalorganic vapor-phase epitaxy; nanopatterned sapphire substrates; ultraviolet light-emitting diodes; NANO-PATTERNED SAPPHIRE; NM ALGAN; FABRICATION; TEMPLATES; GROWTH; LAYERS; LEDS; GAN;

D O I：

10.1002/pssa.201900796

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, AlN growth by metalorganic vapor-phase epitaxy on hole-type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly thin-layer thickness, which is associated to altered nucleation conditions caused by the sapphire pattern. To overcome the obstacle of cracking and at the same time to decrease the threading dislocation density by an order of magnitude, high-temperature annealing (HTA) of a 300 nm-thick AlN starting layer is successfully introduced. By this method, 800 nm-thick, fully coalesced and crack-free AlN is grown on 2 in. nanopatterned sapphire wafers. The usability of such templates as basis for UVC light-emitting diodes (LEDs) is furthermore proved by subsequent growth of an UVC-LED heterostructure with single peak emission at 265 nm. Prerequisites for the enhancement of the light extraction efficiency by hole-type nanopatterned sapphire substrates are discussed.

引用

页数：7

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