He+-ion irradiation effect on intersubband transitions in GaAs/AlGaAs multiple quantum wells

被引：6
|
作者：
Berhane, Y [1 ]
Manasreh, MO
Weaver, BD
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA
[2] USN, Res Lab, Washington, DC 20375 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期
关键词：
D O I：
10.1063/1.1346997
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband transitions in 3 MeV He+-ion irradiated GaAs-AlGaAs multiple quantum wells were studied using an optical absorption technique. The intersubband transitions were completely depleted in samples irradiated with doses as low as 1x10(14) cm(-2). Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses. On the other hand, intersubband transitions in heavily irradiated (doses > 3x10(14) cm(-2)) samples do not show thermal annealing recovery, which indicates that irradiation-induced defects are so severe that thermal annealing does not repair the damage. The total integrated areas of the intersubband transitions in irradiated samples and in a control sample were monitored as a function of annealing temperature. (C) 2001 American Institute of Physics.
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收藏
页码：3517 / 3519
页数：3
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