Bernas ion source discharge simulation

被引：5
|
作者：
Roudskoy, I. [1 ]
Kulevoy, T. V. [1 ]
Petrenko, S. V. [1 ]
Kuibeda, R. P. [1 ]
Seleznev, D. N. [1 ]
Pershin, V. I. [1 ]
Hershcovitch, A. [2 ]
Johnson, B. M. [2 ]
Gushenets, V. I. [3 ]
Oks, E. M. [3 ]
Poole, H. P. [4 ]
机构：
[1] Inst Theoret & Expt Phys, Moscow 117218, Russia
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
[3] Russian Acad Sci, Inst High Current Elect, Tomsk 634055, Russia
[4] PVI, Oxnard, CA USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 02期
关键词：
D O I：
10.1063/1.2823897
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench. (c) 2008 American Institute of Physics.
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页数：3
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