Voltage-controlled spin selection in a magnetic resonant tunneling diode

被引：246

作者：

Slobodskyy, A ^{[1
]}

Gould, C ^{[1
]}

Slobodskyy, T ^{[1
]}

Becker, CR ^{[1
]}

Schmidt, G ^{[1
]}

Molenkamp, LW ^{[1
]}

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.90.246601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn, Mn, Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

引用

页数：4

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