INVESTIGATION OF TRAPS IN AlGaN/GaN HETEROSTRUCTURES BY ULTRASONIC VIBRATIONS

被引：0
|
作者：
Kaliuzhnyi, V. V. [1 ]
Liubchenko, O., I [1 ]
Tymochko, M. D. [1 ]
Olikh, Y. M. [1 ]
Kladko, V. P. [1 ]
Belyaev, A. E. [1 ]
机构：
[1] Nat Acad Sci Ukraine, VE Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine
来源：
UKRAINIAN JOURNAL OF PHYSICS | 2021年 / 66卷 / 12期
关键词：
electronic transport; heterostructure; 2DEG; gallium nitride; ultrasound; HIGH-ELECTRON-MOBILITY; MECHANISMS;
D O I：
10.15407/ujpe66.12.1058
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.
引用
收藏
页码：1058 / 1062
页数：5
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