Optical and electrical properties of β-FeSi2 Single crystals

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作者
Kim, NO [1 ]
Kim, HG
Lee, WS
机构
[1] Chosun Coll Sci & Technol, Dept Elect, Kwangju 501744, South Korea
[2] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea
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O4 [物理学];
学科分类号
0702 ;
摘要
Plate-type beta -FeSi2 single crystals were grown using FeSi2, Fe. and Si as starting materials and using the chemical transport reaction method. The beta - FeSi2 single crystal had an orthorhombic structure. The lattice constants of the single crystal were found to be a = 9.8545 Angstrom, b = 7.7935 Angstrom, and c = 7.8071 Angstrom. The direct optical energy gap was found to be 0.85 eV at 297 X. The electrical conduction type: was measured by the thermal method and was p-type. The electrical conductivity was found to be 7.0 x 10(-3) Ohm (-1) cm(-1) at 300 K. The activation energy was found to be 0.346 eV.
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页码:803 / 805
页数:3
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