Excitonic absorption and defect-related emission in three-dimensional MoS2 pyramids

被引:5
|
作者
Negri, M. [1 ,2 ]
Francaviglia, L. [1 ,7 ]
Kaplan, D. [3 ]
Swaminathan, V [3 ,4 ]
Salviati, G. [2 ]
Morral, A. Fontcuberta i [1 ,5 ]
Fabbri, F. [6 ,8 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Mat, Fac Engn, CH-1015 Lausanne, Switzerland
[2] Inst Mat Elect & Magnetism IMEM CNR, Parco Area Sci 37-A, I-43124 Parma, Italy
[3] US Army RDECOM ARDEC, Fuze Precis Armaments & Technol Directorate, Picatinny Arsenal, NJ 07806 USA
[4] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[5] Ecole Polytech Fed Lausanne, Inst Phys, Fac Basic Sci, CH-1015 Lausanne, Switzerland
[6] Ist Nanosci CNR, Scuola Normale Super, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[7] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[8] Axcelis Technol, Agrate Brianza, MB, Canada
关键词
FEW-LAYER MOS2; MONOLAYER MOS2; OPTICAL-TRANSITIONS; WS2; PHOTOLUMINESCENCE; BEHAVIOR; STRAIN; GROWTH;
D O I
10.1039/d1nr06041d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
MoS2 micro-pyramids have demonstrated interesting properties in the fields of photonics and non-linear optics. In this work, we show the excitonic absorption and cathodoluminescence (CL) emission of MoS2 micro-pyramids grown by chemical vapor deposition (CVD) on SiO2 substrates. The excitonic absorption was obtained at room and cryogenic temperatures by taking advantage of the cathodoluminescence emission of the SiO2 substrate. We detected the CL emission related to defect intra-gap states, localized at the pyramid edges and with an enhanced intensity at the pyramid basal vertices. The photoluminescence and absorption analysis provided the Stokes shift of both the A and B excitons in the MoS2 pyramids. This analysis provides new insights into the optical functionality of MoS2 pyramids. This method can be applied to other 3D structures within the 2D materials family.
引用
收藏
页码:1179 / 1186
页数:9
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