A temperature compensation subsystem for an IMEMS CMOS pressure sensor

被引：2

作者：

Chavez, F ^{[1
]}

Olmos, A ^{[1
]}

Azeredo-Leme, C ^{[1
]}

Charry, E ^{[1
]}

机构：

[1] Univ Sao Paulo, Escola Politecn, Lab Sistemas Integraveis, BR-05508900 Sao Paulo, Brazil

来源：

ELEVENTH ANNUAL IEEE INTERNATIONAL ASIC CONFERENCE - PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ASIC.1998.723056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work is presented a temperature compensation subsystem for a piezoresistive pressure microsensor system operating between 0-50 kPa for medical purposes. Different full scale span and offset voltage can be compensated easily against temperature effects with a CMOS circuit that generates two temperature dependent voltages with 64 possible settings of temperature coefficients: the drive voltage of the active bridge [I] and the reference voltage of the offset cancellation DAC. The subsystem showed a total power dissipation of approximately 3 mW working with 3 volts of power supply.

引用

页码：399 / 403

页数：5

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