Design of an isolated capacitor cell for three-dimensional RF circuit integration

被引：0

作者：

Kim, DJ ^{[1
]}

Lee, YC ^{[1
]}

Choi, BG ^{[1
]}

Eun, KC ^{[1
]}

Park, CS ^{[1
]}

机构：

[1] Informat & Commun Univ, Sch Engn, Taejon 305732, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 38卷 / 06期

关键词：

LTCC multilayer; isolation; capacitor; SRF; Q factor;

D O I：

10.1002/mop.11096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact multilayer capacitor cell isolated with perforated ground was designed and fabricated using low-temperature ceramic co-firing (LTCC) technology for three-dimensional (3D) RF circuit application. The vertical transmission from any interferer placed 174 mum above the capacitor cell and the lateral transmission from any interferer 300 mum apart from the cell were controlled below -20 dB up to 15 GHz. The 2.8-pF capacitor shielded with perforated ground of 600-mum square edge and 800-mum pitch revealed a self-resonant frequency (SRF) of 7.6 GHz and Q factor of over 190 up to 3 GHz, which is an improvement of SRF by 0.8 GHz and Q factor by 224%, compared to the capacitor with a conventional blanket ground. (C) 2003 Wiley Periodicals, Inc.

引用

页码：484 / 486

页数：3

共 50 条

[1] Overview and Outlook of Three-Dimensional Integrated Circuit Packaging, Three-Dimensional Si Integration, and Three-Dimensional Integrated Circuit Integration
Lau, John H.
[J]. JOURNAL OF ELECTRONIC PACKAGING, 2014, 136 (04)
[2] Three-dimensional RF and circuit modelling of the revised ITER ICRF launcher design
Louche, Fabrice
Durodie, Frederic
Helou, Walid
Lamalle, Philippe U.
Calarco, Francois
[J]. 23RD TOPICAL CONFERENCE ON RADIOFREQUENCY POWER IN PLASMAS, 2020, 2254
[3] Three-dimensional PN junction capacitor for passive integration
Wang, Huijuan
Wan, Lixi
Yu, Daquan
Guidotti, Daniel
He, Ran
Dai, Fengwei
Cao, Liqiang
Zhang, Xia
Zhao, Ning
Guo, Xueping
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (05)
[4] Three-dimensional integration of silicon-on-insulator RF amplifier
Chen, C. L.
Chen, C. K.
Yost, D. -R.
Knecht, J. M.
Wyatt, P. W.
Burns, J. A.
Warner, K.
Gouker, P. M.
Healey, P.
Wheeler, B.
Keast, C. L.
[J]. ELECTRONICS LETTERS, 2008, 44 (12) : 746 - U139
[5] Low temperature silicon circuit layering for three-dimensional integration
Kim, SK
Xue, L
Tiwari, S
[J]. 2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2004, : 136 - 138
[6] Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling
Gu, Q
Xu, ZW
Kim, J
Ko, JW
Chang, MF
[J]. 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 96 - 97
[7] Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration
Chen, Lihan
Wood, Joe
Raman, Sanjay
Barker, N. Scott
[J]. 2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, : 1115 - +
[8] Vertical RF Transition with Mechanical Fit for Three-Dimensional Heterogeneous Integration
Chen, Lihan
Wood, Joe
Raman, Sanjay
Barker, N. Scott
[J]. 2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 534 - +
[9] Spatiotemporal integration of isolated binocular three-dimensional motion cues
Whritner, Jake A.
Czuba, Thaddeus B.
Cormack, Lawrence K.
Huk, Alexander C.
[J]. JOURNAL OF VISION, 2021, 21 (10): : 2
[10] Vertically stacked RF switches by wafer-scale three-dimensional integration
Chen, C. L.
Chen, C. K.
Yost, D. -R.
Knecht, J. M.
[J]. ELECTRONICS LETTERS, 2012, 48 (10) : 597 - U92

← 1 2 3 4 5 →