Ultra-low resistive GaSb/InAs tunnel junctions

被引：20
|
作者：
Vizbaras, Kristijonas [1 ]
Toerpe, Marcel [1 ]
Arafin, Shamsul [1 ]
Amann, Markus-Christian [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85478 Garching, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 07期
关键词：
OHMIC CONTACTS; LASER;
D O I：
10.1088/0268-1242/26/7/075021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The GaSb and InAs(Sb) material combination results in a type-III (broken gap) band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity contact in complex optoelectronic devices, such as buried-tunnel-junction vertical-cavity surface-emitting lasers. In this work, we report electrical characteristics of MBE-grown p(+)-GaSb/n(+)-InAs tunnel junctions. The investigated structures exhibit ultra-low resistive behavior, yielding specific resistivity values below 2.8 x 10(-7) Omega cm(2). This value is nearly ten times better than previously reported best values.
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页数：4
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