On the electrical characteristics of vacuum evaporated indium selenide thin films

The electrical conductivity, a, of Indium Selenide (InSe) semiconducting thin films prepared by vacuum evaporation technique onto glass substrates maintained at different temperatures (303-573K) was investigated. For the film deposited onto unheated substrate, the conductivity was 5.64 x 10(-4) Omega(-1) m(-1) and after first heating-cooling process and second heating-cooling process the values were 18.36 Omega(-1) m(-1) and 361.4 Omega(-1) m(-1) respectively. For the films deposited at the substrate temperature 573 K before and after heat treatment the values were 2.07 x 10(-7) Omega-1 m(-1), 6.82 Omega(-1) m(-1), respectively. The effects of substrate temperature and post deposition heat treatment on the temperature dependence of the electrical conductivity of the films were studied. Before heating-cooling process the band gap values and refractive index for the above films were calculated. The results were discussed in detail in relation with film recrystallization during the heating-cooling process.