Giant electrical control of magnetic anisotropy in magnetoelectric heterostructures using (011) PMN-PT single crystal

被引：6

作者：

Wu, Tao ^{[1
]}

Bur, Alexandre ^{[1
]}

Kim, Hyungsuk K. D. ^{[2
]}

Zhao, Ping ^{[1
]}

Carman, Gregory P. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

BEHAVIOR AND MECHANICS OF MULTIFUNCTIONAL MATERIALS AND COMPOSITES 2011 | 2011年 / 7978卷

关键词：

Converse magnetoelectric effect; piezoelectric; magnetostrictive; PMN-PT; strain hysteresis; MULTIFERROICS;

D O I：

10.1117/12.880701

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report giant electrical control of magnetic anisotropy in a magnetoelectric polycrystalline Ni thin film and (011)-oriented [Pb(Mg1/3Nb2/3)O-3]((1-x))-[PbTiO3](x) (PMN-PT) heterostructure. The (011) PMN-PT ferroelectric substrate exhibits both linear anisotropic piezoelectric response and unique giant hysteretic response. These important features can significantly tune the magnetization states via strain coupling. Reversible and permanent magnetization reorientation demonstrates an approach for developing magnetoelectric memory devices.

引用

页数：8

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