Intrinsic thermally compensated field sensor based on single magnetic tunnel junctions

被引:7
|
作者
Malinowski, G [1 ]
Hehn, M [1 ]
Montaigne, F [1 ]
Jouguelet, E [1 ]
Schuhl, A [1 ]
机构
[1] CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France
关键词
D O I
10.1063/1.1646220
中图分类号
O59 [应用物理学];
学科分类号
摘要
The association of an antiferromagnetic material with a ferromagnetic material in an exchange coupled bilayer is used as a detection layer in a tunnel magnetoresistive sensor. The magnetic response is shown to be reversible and linear depending on the field range to be measured. Both tunnel magnetoresistance and exchange field decrease linearly with the temperature and lead to temperature independent sensor sensibility. (C) 2004 American Institute of Physics.
引用
收藏
页码:1204 / 1206
页数:3
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