Development of silicon strip detectors for a medium energy gamma-ray telescope

被引:18
|
作者
Bloser, P
Schopper, F
Andritschke, R
Kanbach, G
Zoglauer, A
Lechner, P
机构
[1] Max Planck Inst Extraterr Phys, D-85748 Garching, Germany
[2] PNSensor GmbH, D-80803 Munich, Germany
关键词
silicon strip detectors; gamma-ray detectors; X-ray detectors; gamma-ray astronomy;
D O I
10.1016/S0168-9002(03)01897-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report on the design, production, and testing of advanced double-sided silicon strip detectors under development at the Max-Planck-Institute as part of the Medium Energy Gamma-ray Astronomy (MEGA) project. The detectors are designed to form a stack, the "tracker," with the goal of recording the paths of energetic electrons produced by Compton-scatter and pair-production interactions. Each layer of the tracker is composed of a 3 x 3 array of 500 gm thick silicon wafers, each 6 cut x 6 cm and fitted with 128 orthogonal p and n strips on opposite sides (470 mum pitch). The strips are biased using the punch-through principle and AC-coupled via metal strips separated from the strip implant by an insulating oxide/nitride layer. The strips from adjacent wafers in the 3 x 3 array are wire-bonded in series and read out by 128-channel TA1.1 ASICs, creating a total 19 cm x 19 cm position-sensitive area. At 20degreesC a typical energy resolution of 15-20 keV FWHM, a position resolution of 290 gm, and a time resolution of similar to1 mus is observed. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:220 / 228
页数:9
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